There exists a close relationship between radio frequency  generator and PECVD (Plasma-Enhanced Chemical Vapour Deposition), which Wattsine believes manifests primarily in the following aspects:

1. Radio frequency  generator constitute the core component of PECVD

‌Plasma generation: PECVD technology relies on plasma to enhance chemical reactions. The RF  generator applies an RF electric field to electrodes within the reaction chamber, ionising the gas to generate plasma. This plasma contains a high concentration of energetic electrons, ions, and reactive species that catalyse the film deposition reaction.

‌Energy supply: Provides the requisite energy for chemical reactions during the PECVD process. Unlike conventional chemical vapour deposition (CVD), where reactions are primarily driven by thermal energy, PECVD utilises electrical energy from the RF generator. This enables reactions to proceed at relatively low temperatures, which is crucial for certain temperature-sensitive substrate materials.

2. RF  generator Parameters Affecting PECVD Film Properties

RF Frequency: Different RF frequencies influence plasma characteristics and distribution. Common frequencies include 13.56 MHz. Frequency selection determines the collision frequency between electrons and gas molecules, thereby influencing plasma density and uniformity. This ultimately affects the quality, uniformity, and structure of the deposited film. Currently, Wattsine offers RF generator at frequencies of 2 MHz, 13.56 MHz, 27 MHz, 40 MHz, and 60 MHz for customer selection.

Power Level: The power output of the RF power generator directly determines the plasma's energy density. Increased power elevates particle energy within the plasma, accelerating chemical reaction rates and correspondingly boosting film deposition rates. However, excessively high power may compromise film quality, leading to defects or stress issues. Wattsine's RF generator currently offer selectable frequencies ranging from 1kW to 30kW; custom solutions are available for high-volume requirements.

3. Process Control Aspects

Stability Requirements: During PECVD processes, the RF generator must maintain stable output to ensure plasma stability. A consistent plasma environment facilitates uniform, high-quality film deposition. Fluctuations in RF power supply output cause variations in plasma parameters, disrupting the deposition process and resulting in non-uniform film thickness and properties.

Adjustability Requirements: To accommodate diverse PECVD process demands, the RF power generator must offer adjustable parameters. For instance, depositing different film types may necessitate modifying RF power, frequency

, and other settings to optimise reaction conditions and achieve optimal film performance.

As a leading RF generator manufacturer, Wattsine RF generator perfectly fulfil these two requirements. Our units employ fully digital design, enabling rapid frequency adjustment to achieve high output power stability and reliability. This allows users to obtain films with uniform thickness and superior performance.

In summary, the RF power supply provides the critical energy for generating plasma and driving chemical reactions in PECVD. Its performance and parameter settings play a decisive role in the effectiveness of the PECVD process and the quality of the deposited film. Wattsine RF generator are your unparalleled choice.